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this is information on a product in full production. february 2014 docid024777 rev 2 1/15 15 STL24N60M2 n-channel 600 v, 0.186 typ., 18 a mdmesh ii plus? low q g power mosfet in a powerflat? 8x8 hv package datasheet ? production data figure 1. internal schematic diagram features ? extremely low gate charge ? lower r ds(on) x area vs previous generation ? low gate input resistance ? 100% avalanche tested ? zener protected applications ? switching applications description this device is an n-channel power mosfet developed using a new generation of mdmesh? technology: mdmesh ii plus? low q g . this revolutionary power mosfet associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. d(3) g(1) s(2) am01476v1 6 6 6 * ' 3rzhu)/$7?[+9 %rwwrpylhz order code v ds @ t jmax r ds(on) max i d STL24N60M2 650 v 0.21 18 a table 1. device summary order code marking package packaging STL24N60M2 24n60m2 powerflat? 8x8 hv tape and reel www.st.com
contents STL24N60M2 2/15 docid024777 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
docid024777 rev 2 3/15 STL24N60M2 electrical ratings 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d (1) 1. the value is rated according to r thj-case and limited by package. drain current (continuous) at t c = 25 c 18 a i d (1) drain current (continuous) at t c = 100 c 12 a i dm (1),(2) 2. pulse width limited by safe operating area. drain current (pulsed) 72 a p tot (1) total dissipation at t c = 25 c 125 w dv/dt (3) 3. i sd 18 a, di/dt 400 a/ s, v ds(peak) < v (br)dss , v dd =400 v peak diode recovery voltage slope 15 v/ns dv/dt (4) 4. v ds 480 v mosfet dv/dt ruggedness 50 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 1 c/w r thj-pcb (1) 1. when mounted on fr-4 board of inch2, 2oz cu. thermal resistance junction-pcb max 45 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by t jmax ) 3.5 a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50) 180 mj
electrical characteristics STL24N60M2 4/15 docid024777 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 600 v i dss zero gate voltage drain current v gs = 0, v ds = 600 v 1 a v gs = 0, v ds = 600 v, t c =125 c 100 a i gss gate-body leakage current v ds = 0, v gs = 25 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 234v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 9 a 0.186 0.21 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 1060 - pf c oss output capacitance - 55 -pf c rss reverse transfer capacitance - 2.2 -pf c oss eq. (1) 1. c oss eq. is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent output capacitance v ds = 0 to 480 v, v gs = 0 - 258 - pf r g intrinsic gate resistance f = 1 mhz open drain - 7 - q g total gate charge v dd = 480 v, i d = 18 a, v gs = 10 v (see figure 15 ) -29-nc q gs gate-source charge - 6 - nc q gd gate-drain charge - 12 - nc
docid024777 rev 2 5/15 STL24N60M2 electrical characteristics table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) turn-on delay time v dd = 300 v, i d = 9 a, r g = 4.7 , v gs = 10 v (see figure 14 and 19 ) -14-ns t r rise time - 9 - ns t d(off) turn-off delay time - 60 - ns t f fall time - 15 - ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd (1) 1. the value is rated according to r thj-case and limited by package. source-drain current - 18 a i sdm (1),(2) 2. pulse width limited by safe operating area source-drain current (pulsed) - 72 a v sd (3) 3. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 18 a, v gs = 0 - 1.6 v t rr reverse recovery time i sd = 18 a, di/dt = 100 a/ s v dd = 60 v (see figure 16 ) -332 ns q rr reverse recovery charge - 4 c i rrm reverse recovery current - 24 a t rr reverse recovery time i sd = 18 a, di/dt = 100 a/ s v dd = 60 v, t j = 150 c (see figure 16 ) -450 ns q rr reverse recovery charge - 5.5 c i rrm reverse recovery current - 25 a
electrical characteristics STL24N60M2 6/15 docid024777 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance i d 10 1 0.1 1 100 v ds (v) 10 (a) operation in this area is limited by max r ds(on) 10s 1ms 0.1 tj=150c tc=25c single pulse 100 s 10ms am15659v1 10 -5 10 -4 10 -3 10 -2 t p (s) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 single pulse d =0.5 c zth powerflat 8x8 hv figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized v (br)dss vs temperature figure 7. static drain-source on-resistance i d 15 10 5 0 0 10 v ds (v) (a) 5 15 20 25 5v 4v 7v v gs =8, 9, 10v 30 6v 20 35 40 am15660v1 i d 15 10 5 0 0 4 v gs (v) 8 (a) 2 6 20 25 30 v ds =17v 35 10 40 45 am15661v1 v (br)dss -50 t j (c) (norm) -25 0 0.93 0.95 0.97 0.99 1.01 i d =1 ma 25 50 75 100 125 1.09 1.03 1.05 1.07 am15662v1 r 0 2 id(a) ( ) 4 6 8 vgs=10 a 0.178 0.180 0.182 0.184 0.186 0.188 0.190 0.192 0.194 ds(on) 10 12 14 16 am15663v1
docid024777 rev 2 7/15 STL24N60M2 electrical characteristics figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on-resistance vs temperature figure 12. source-drain diode forward characteristics figure 13. output capacitance stored energy v gs 6 4 2 0 0 5 q g (nc) (v) 20 8 10 15 10 v dd =480 v i d =18 a 25 300 200 100 0 400 500 v ds (v) v ds 12 30 600 am15471v1 c 1000 100 10 1 0.1 10 v ds (v) (pf) 1 100 ciss coss crss am15665v1 v gs(th) 0.9 0.8 0.7 0.6 -50 0 t j (c) (norm) -25 1.0 75 25 50 100 i d = 250 a 1.1 am15473v1 r ds(on) tj(c) (norm) i d =9 a -50 -25 0 25 50 75 100 125 0.5 0.7 0.9 1.1 1.3 1.5 1.7 1.9 2.1 2.3 2.5 v gs =10 v am15667v1 v sd 0 4 i sd (a) (v) 2 10 6 8 0 0.2 0.4 0.6 0.8 1 1.2 t j =-50c t j =150c t j =25c 1.4 12 14 16 18 am15668v1 eoss 0 v ds (v) (j) 200 100 300 0 1 2 3 4 5 6 7 8 400 500 600 am15669v1
test circuits STL24N60M2 8/15 docid024777 rev 2 3 test circuits figure 14. switching times test circuit for resistive load figure 15. gate charge test circuit figure 16. test circuit for inductive load switching and diode recovery times figure 17. unclamped inductive load test circuit figure 18. unclamped inductive waveform figure 19. switching time waveform am01468v1 v gs p w v d r g r l d.u.t. 2200 f 3.3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =const 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fast diode d s l=100 h f 3.3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3.3 f v dd am01472v1 v (br)dss v dd v dd v d i dm i d am01473v1 v ds t on td on td off t off t f t r 90% 10% 10% 0 0 90% 90% 10% v gs
docid024777 rev 2 9/15 STL24N60M2 package mechanical data 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack ? is an st trademark.
package mechanical data STL24N60M2 10/15 docid024777 rev 2 figure 20. powerflat? 8x8 hv drawing mechanical data 8222871_rev_c
docid024777 rev 2 11/15 STL24N60M2 package mechanical data figure 21. powerflat? 8x8 hv recommended footprint (dimensions in mm.) table 9. powerflat? 8x8 hv mechanical data dim. mm min. typ. max. a 0.80 0.90 1.00 a1 0.00 0.02 0.05 b 0.95 1.00 1.05 d8.00 e8.00 d2 7.05 7.20 7.30 e2 4.15 4.30 4.40 e2.00 l 0.40 0.50 0.60 8222871_rev_c_footprint
packaging mechanical data STL24N60M2 12/15 docid024777 rev 2 5 packaging mechanical data figure 22. powerflat? 8x8 hv tape figure 23. powerflat? 8x8 hv package orientation in carrier tape. w (16.000.3) e (1.750.1) f (7.500.1) a0 (8.300.1) p1 (12.000.1) p2 (2.00.1) p0 (4.00.1) d0 ( 1.550.05) d1 ( 1.5 min) t (0.300.05) b0 (8.300.1) k0 (1.100.1) note: base and bulk quantity 3000 pcs 8229819_tape_reva
docid024777 rev 2 13/15 STL24N60M2 packaging mechanical data figure 24. powerflat? 8x8 hv reel 8229819_reel_reva
revision history STL24N60M2 14/15 docid024777 rev 2 6 revision history table 10. document revision history date revision changes 11-jun-2013 1 first release. 28-feb-2014 2 ? modified: i d (at t c = 100 c) value in table 3 ? modified: v sd max value ? modified: figure 3 , 11 ? updated: section 4: package mechanical data ? minor text changes
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